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The device employs Silent Switcher 2 architecture with internal hot loop bypass capacitors to achieve both low EMI and high efficiency at switching frequencies as high as 5MHz
Taper: Linear
MICROCNTRLLR
and CMOS control circuitry for the common CLEAR
CONVERTIBLE
Micron Technology DRAM SDRAMMobile-, Part #: MT49H8M36SJ-25:B | Dynamic random access memory | DEX amplifier The device employs Silent SwitcherMicron Technology DRAM RLDRAM2, Part #: MT49H8M36SJ 25: B features: 533 MHz DDR operation (1. 067 Gb s pin data rate) 38. 4 Gb s peak bandwidth (x36 at 533 MHz clock frequency) Organization 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 8 internal banks for concurrent operation and maximum bandwidth Reduced cycle time (15ns at 533 MHz) Nonmultiplexed addresses (address multiplexing option available) SRAM type interface Programmable READ latency (RL), row
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