Micron Technology DRAM RLDRAM3, Part #MT41K128M16JT-107 IT:K TR | Dynamic random access memory | DEX FT702LT 8G 22M 150W

8G 22M 150W

Description: 75V

+/-250mVOn-die

Low input capacitance (Ciss)

ST373453LW

Micron Technology DRAM RLDRAM3, Part #MT41K128M16JT-107 IT:K TR | Dynamic random access memory | DEX FT702LT 8G 22M 150WMicron Technology DRAM SDRAM DDR3L, Part #MT41K128M16JT 107 IT: K TR Features VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based